Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell

ABSTRACT

A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. patent application Ser. No.11/357,287, filed Feb. 16, 2006, now pending, which is a Divisional ofU.S. patent application Ser. No. 10/164,943, filed Jun. 4, 2002, nowissued, U.S. Pat. No. 7,042,045, which are incorporated by reference intheir entirety.

TECHNICAL FIELD

This disclosure relates to non-volatile memory cells, and, moreparticularly, to memory cells having Silicon-Oxide-Nitride-Oxide-Silicongate structures.

BACKGROUND OF THE INVENTION

Semiconductor memory devices that are used for storing data cangenerally be categorized as being either volatile or non-volatile memorydevices. Volatile memory devices lose their stored data when their powersupplies are interrupted, while nonvolatile memory devices retain theirstored data even when their power supplies are interrupted. Thus,nonvolatile memory devices are widely used in situations where power isnot always available, is frequently interrupted, or when low power usageis required, such as in mobile telecommunication systems, memory cardsfor storing music and/or image data, and in other applications.

Generally, cell transistors in non-volatile memory devices have astacked gate structure. The stacked gate structure includes,sequentially stacked on a channel region of the cell transistor, a gateinsulating layer, a floating gate, an inter-gate dielectric layer and acontrol gate electrode, Viewed in cross section of FIG. 2, some types ofnon-volatile memory devices have layers of Silicon (in which the channelregion is formed), Oxide (which forms the tunneling layer), Nitride(used for the charge trapping layer), Oxide (used for the blockinglayer), and Silicon (used for the control gate electrode). Sometimesthese layers are collectively referred to as SONOS.

FIGS. 1-4 show the conventional structure of a semiconductor nonvolatilememory device having the SONOS structure that is able to be programmedby hot electron injection. The conventional method of fabricating itwill be explained with reference to those figures.

As shown in FIG. 1, a silicon oxide layer for providing a tunnelinglayer 1 is formed over the entire surface of a semiconductor substrate6. Next, a silicon nitride layer for providing a charge trapping layer 2is formed over the whole surface of the tunneling layer 1 by, forexample, a chemical vapor deposition (CVD) process. This silicon nitridelayer is subjected to a thermal oxidation to form a silicon oxide layerfor providing a blocking layer 3. Of course, other methods of formingthe blocking layer 3 are known, and can be used instead of or inconjunction with thermal oxidation.

After this, a polycrystalline silicon layer for providing a control gateelectrode 4 is formed over the whole surface of the blocking layer 3 by,e.g., a chemical vapor deposition process. The preceding processes makea structure as shown in FIG. 1.

A patterned photoresist (not shown) is then formed on thepolycrystalline silicon layer. The patterned photoresist is used as anetching mask to sequentially etch the polycrystalline silicon layer, theblocking layer 3, the charge trapping layer 2 and the tunneling layer 1in order to create therefrom a memory cell 5 including a polysiliconcontrol gate electrode 14, a blocking layer 13, a charge trapping layer12 and a tunneling layer 8, as shown in FIG. 2. The photoresist that wasused as the etching mask is thereafter removed.

The tunneling layer 8 is a dielectric layer through which chargecarriers (holes or electrons) can be injected. The charge trapping layer12 is a dielectric layer whose function is to trap electrons or holesthat were injected through the tunneling layer 8. The function of theblocking layer 13 is to block injected electrons or holes from travelingthrough to the control gate electrode 14, during writing and erasingoperations of the memory cell.

Next, high-concentration diffused regions 15, 17 are formed byimplanting a first conductivity type ions into the region of thesemiconductor substrate 6 at prescribed portions thereof, self-alignedwith opposite sides of the polysilicon control gate 14. Thehigh-concentration diffused regions 15, 17 operate as the source ordrain of the memory cell 5, as described below.

The operation of the conventional semiconductor nonvolatile memorydevice 5 having the SONOS structure will be explained with reference toFIGS. 3 and 4.

When the control gate 14 is positively charged and the diffused regions15, 17 are properly biased, hot electrons from the semiconductorsubstrate 6 are trapped into a charge trapping region 7 of the chargetrapping layer 12. This is known as writing to or “programming” thememory cell 5. As can be seen in FIG. 3, the trapping region 7 has alength “A”.

Similarly, when the control gate 14 is negatively charged, and thediffused regions 15, 17 are properly biased, holes from thesemiconductor substrate 6 can also be trapped in the trapping region 7,combining with any extra electrons that are already in the trappingregion. This is known as “erasing” the programmed memory cell 5.

Specifically, the electrons or holes trapped in the trapping region 7can change the threshold voltage of the semiconductor nonvolatile memorydevice 5. Typically, programming stops when a threshold voltage of thememory device 5 has reached a certain predetermined point (i.e., whenthe channel current is reduced to a sufficiently low level). This pointis chosen to ensure that a ‘0’ bit stored in the memory device can bedistinguished from a ‘1’ bit, and that a certain data retention time hasbeen achieved.

Erasing typically stops when the threshold voltage has reached itsformer condition (i.e., when enough holes are trapped in the trappingregion 7 to recombine with the previously trapped electrons). However,when an excessive amount of electrons are trapped in the trapping region7 of the charge trapping layer 12, or not enough holes can be injectedinto the trapping region to bring the memory cell to its formercondition, then the threshold voltage of the memory cell 5 cannot becompletely erased, i.e., cannot reach the necessary prescribedcondition. The memory cell 5 in this state is useless, because it cannever be erased.

FIG. 4 shows a sub-portion B of the trapping region 7, along with thesub-portion A. The length labeled A in FIGS. 3 and 4 indicates the areain the trapping region 7 where the electrons are trapped in the chargetrapping layer 12, while a length labeled B indicates the portion of thetrapping region 7 that traps the holes.

The difference in length of measurements A and B in FIG. 4 may explainthe above condition where too many electrons or not enough holes aretrapped in the region 7, preventing the memory cell 5 from beingcompletely erased, and thus rendered useless. The fact that electronsare trapped in an area far away from the highly doped area 17(functioning as the drain or source) may adversely affect the eraseoperation. In some cases, the memory device 5 cannot be completelyerased because the trapping region 7 is programmed too wide. Thus,storing too many electrons or holes in the trapping region 7 and thestored carriers' location relative to the diffused regions 15, 17 cancause errors during operation of the nonvolatile memory device 5.

Embodiments of the invention address these and other deficiencies in theprior art.

BRIEF DESCRIPTION OF THE DRAWINGS

The description of the present invention may be best understood byreading the disclosure with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view of a substrate having SONOS layersformed thereon.

FIG. 2 is a cross-sectional view of the substrate of FIG. 1 after it hasbeen patterned to form a non-volatile memory device.

FIGS. 3 and 4 are cross-sectional views illustrating programming anderasing operations of the memory device shown in FIG. 2.

FIG. 5 is a cross-sectional view of a non-volatile memory cell accordingto an embodiment of the present invention.

FIG. 6 is a cross-sectional view of a non-volatile memory cell accordingto another embodiment of the present invention.

FIG. 7A is a schematic diagram of memory cells according to embodimentsof the present invention in different various states of operation.

FIG. 7B is a chart indicating signals used to drive the memory cellsshown in FIG. 7A.

FIGS. 8 to 11 are cross-sectional views illustrating methods offabricating a nonvolatile memory device of the present inventionutilizing SONOS.

FIG. 12 is a cross-sectional view showing another embodiment of thepresent invention utilizing SONOS.

FIGS. 13A-13G are cross-sectional views illustrating methods offabricating the nonvolatile memory device of FIG. 12.

FIGS. 14A-14C are cross-sectional views illustrating additional ways tofabricate the nonvolatile memory device of FIG. 12.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 5 is a cross-sectional view of a non-volatile memory cell 110having a SONOS structure, according to embodiments of the invention. Thememory cell 110 includes, formed on a substrate 60, a tunneling layer10, a charge trapping layer 20, a blocking layer 30, and a control gateelectrode 40. Additionally formed on the substrate 60 is a gateinsulating layer 90. Formed within the substrate 60, substantially belowedges of the control gate 40 are a drain 50 and a source 70, which aremade by doping the substrate appropriately. The functions of the drain50 and source 70 can be interchanged by applying a biasing voltage, asdiscussed below. As shown in FIG. 5, the charge trapping layer 20 doesnot extend fully across the length of the memory cell 110, but onlyacross a portion thereof. Additionally, as shown in FIG. 6, the memorycell 110 can also include a metal silicide layer 100 formed on thecontrol gate 40. The metal in the metal silicide layer 100 could be, forexample, Tungsten, Titanium, Tantalum, Molybdenum, or others. The metalsilicide layer 100 is oftentimes used in this manner to reduce theresistance of a word line in a memory array, as the word lines aretypically coupled to the control gates 40 of memory cells 10 making upthe memory array.

The memory cell 110 can be written to, or programmed, read, and erasedby applying different voltages to its control gate 40, its source 70,and its drain 50, as discussed below. Reading the memory cell 110determines if the cell is in a programmed or an erased state. Ingeneral, programming the memory cell 110 means injecting hot electronsinto trapping regions of the charge trapping layer 20, while erasing thememory cell means injecting holes into the trapping regions, therebyneutralizing the previously trapped electrons.

To write, or program the memory cell 110, voltages can be applied to thecontrol gate 40 and the drain 50 while grounding the source 70 to causeelectrons to be trapped in the trapping regions of the charge trappinglayer 20. For example, 9V can be applied to the control gate 40, 6.5Vapplied to the drain 50, and 0V applied to the source 70. These voltagescreate a vertical and lateral electric field along the length of achannel region that extends from the source 70 to the drain 50. Thiselectric field causes electrons to be drawn off the source 70 and beginaccelerating toward the drain 50. As the electrons move along the lengthof the channel, they gain energy. Some of the electrons gain enoughenergy or become “hot” enough to jump over the potential barrier of theoxide layer 10 and enter the charge trapping layer 20 where they becometrapped. The probability of this occurrence is greatest in the region ofthe channel near the drain 50, which is where the electrons have gainedthe most energy. Once the hot electrons are injected into the chargetrapping layer 20, they become trapped in trapping regions in the layer,and remain stored therein.

To read the memory cell 110, voltages can be applied to the control gate40 and to the source 70, while the drain 50 is grounded. Reading thememory cell 110 can either be in the same direction in which it wasprogrammed (“forward read”), or can be read in a direction opposite towhich it was programmed (“reverse read”), as is known in the art.Reading the memory cell 110 in the reverse direction generally allowsthe cell to be read with lower voltages applied to the cell because thesame amount of charge stored in the charge trapping layer 20 is easierto detect in the reverse direction than in the forward direction. Forexample, to read the memory cell 110 in the reverse direction, 3V isapplied to the control gate 40, 1V is applied to the source 70, and 0Vis applied to the drain 50.

In general, the trapped electrons remain in the charge trapping layer 20near the drain 50, and do not migrate across the charge trapping layer.Thus, when the memory cell 110 is programmed by trapping electrons inthis layer, the threshold voltage of the cell rises. This is because anadditional voltage must be applied to the control gate 40 to overcomethe charge of the electrons that are trapped in the charge trappinglayer 20, in order to invert the channel region of the memory cell 110.For example, the threshold voltage, which is typically 0.7-1.2 Voltswhen no electrons are trapped in the nitride layer 20, rises toapproximately 4V in the portion of the channel under the charge trappinglayer 20 in which electrons are trapped. The threshold voltage of theremainder of the channel of the memory cell 110 remains at, for example,approximately 1 V, even when the charge trapping layer 20 containstrapped electrons.

Because, as described above, when reading the memory cell 110 onlyapproximately 3V is applied to the control gate 40, there is not enoughvoltage applied to the control gate 40 to overcome the increasedthreshold voltage (4V) when the charge trapping layer 20 is trappingelectrons, yet there is enough voltage applied to the control gate 40 toovercome the threshold voltage (1V) when the charge trapping layer 20 isnot storing electrons. Therefore, based on the ability of the memorycell 110 to have different threshold voltages, the contents of thememory cell can be read by applying the voltages to the control gate 40,the source 70 and the drain 50 as described above.

When the 3V signal is applied to the control gate 40, non-programmedmemory cells 110 (i.e., those not having electrons trapped in theircharge trapping layer 20) can conduct current between the source and thedrain, while programmed memory cells (those having electrons stored intheir charge trapping layer 20) cannot conduct current. By applying apotential difference of 1V between the source 70 (1V) and the drain 50(0V), when the 3V is applied to the control gate 40, those memory cells110 that can conduct current (the non-programmed memory cells) will soconduct, and those memory cells that cannot conduct current (theprogrammed memory cells) will not conduct.

Thus, the nonvolatile memory cell 110 can be turned ON or OFF dependingon whether it is written (programmed) or not. Specifically speaking, ifthe memory cell 110 is in a programmed state, i.e., its charge trappinglayer 20 has been injected with electrons, the threshold voltage of thememory cell is HIGH and, hence, when a 3V signal is applied to itscontrol gate 40 the memory cell conducts no current and is in an OFFstate. In contrast, if the charge trapping layer 20 is not injected withelectrons, current flows between the drain 50 and source 70 and, hence,the nonvolatile memory cell 110 is turned ON. As a result, a datum “1”or “0“can be read from the memory cell.

To erase the memory cell 110 of FIG. 5, a set of voltages different thanthose used to program or read the memory cell are used. For example, a−9V signal can be applied to the control gate 40 while 6.5V is appliedto the drain 50. The source 70 is allowed to float. As a result, theelectrons previously retained in the nitride layer 20 are removedtherefrom toward the drain, or the holes in the drain 50 are injectedtherefrom toward the charge trapping layer 20. Whatever the actualmechanism, the electrons previously stored in the charge trapping layer20 are removed or neutralized by the injected holes, thus returning thememory cell 110 to its native, erased state.

FIG. 7A is a schematic diagram showing one example of how multiplememory cells 110 can be joined to form a memory array 200. The memoryarray 200 of FIG. 7A includes six memory cells 110, coupled in a NORarray configuration, with three word lines, CG0, CG1, CG2, which areeach coupled to the control gate 40 of two memory cells, two bit linesD1 and D2, each of which is coupled to the drain 50 of three memorycells, and a common source line, which is coupled to the source 70 ofall six memory cells. FIG. 7B is a chart showing how a particular cellof the memory array 200 can be programmed, erased, and read by applyingappropriate voltages to the control lines CG1, SL, and D2, connected tothe particular cell, which is on the right hand side in the middle ofthe array 200.

The charge trapping layer 20 of the memory cell 110 of FIGS. 5 and 6differs from the charge trapping layer 12 of the memory cell 5 of FIGS.1-4. Specifically, while the charge trapping layer 12 of the memory cell5 extends across the entire length of the memory cell 5, the chargetrapping layer 20 of the memory cell 110 extends across only a portionof the length of the memory cell 110.

Shown in FIGS. 5 and 6 is an overlap length “C” of the charge trappinglayer 20, which indicates the length of the nitride layer 20 that isoverlapped by the control gate 40 of the memory cell 110. It has beendetermined that program and erase operations of the memory cell 110 canbe strongly affected by the overlap length C of the charge trappinglayer 20 and the control gate 40. The effects on cell performance due tothe over lap length C are summarized in Table1 and Table2. TABLE 1 Theeffect of charge trapping overlap length on programming speed Programtime [s] Overlap length (C) Initial 10 us 30 us 50 us 70 us 100 us 500us 1 ms Full length of gate [ΔVth] 0 1.2 1.7 2.1 2.4 2.7 2.8 2.9One-half of gate length [ΔVth] 0 2.4 3.0 3.3 3.4 3.7 4.7 4.9 One-thirdof gate length [ΔVth] 0 2.3 2.9 3.2 3.3 3.6 4.5 4.7 One-quarter of gatelength 0 2.1 2.8 3.0 3.2 3.4 4.2 4.4 [ΔVth]

TABLE 2 The effect of charge trapping overlap length on erasing speedErase time [s] Overlap length (C) Initial 10 us 30 us 50 us 70 us 100 us500 us 1 ms Full length of gate [ΔVth] 0 −1.2 −1.2 −1.3 −1.3 −1.4 −1.4−1.4 One-half of gate length [ΔVth] 0 −2.4 −2.6 −2.7 −2.8 −2.9 −3.1 −3.2One-third of gate length [ΔVth] 0 −2.5 −2.9 −3.1 −3.2 −3.2 −3.3 −3.4One-quarter of gate length 0 −2.6 −3.3 −3.5 −3.5 −3.6 −3.7 −3.7 [ΔVth]

These tables show how much the threshold voltage (Vth) changes in thememory cell 110 for different periods of programming or erase time formemory cells 110 having different overlap lengths C, i.e., the length ofthe charge trapping layer 20 that is overlapped by the control gate 40.For example, Table 1 shows that programming a memory cell 110 having anoverlap length C of one-third the length of the control gate 40 for atime period of 70 μs will increase the threshold voltage of the memorycell by 3.3 volts. Erasing the same memory cell for the same amount oftime (Table 2) will reduce the threshold voltage by 3.2 volts.

As can be seen in Table 1, increasing the overlap length C of the chargetrapping layer 20 increases the programming speed. For example, a memorycell 110 having an overlap C of one-quarter the gate length that isprogrammed for 50 μs can have its threshold raised 3.0 volts, while ifthe memory cell had an overlap C of one-half the gate length, the samechange in threshold voltage can be accomplished in only 30 μs.

However, as shown in Table 2, increasing the overlap length C of thecharge trapping layer retards the erase speed. For example, a memorycell 110 having an overlap C of one-third of the gate length that iserased for 50 μs can have its threshold voltage reduced by 3.1 volts,but if the memory cell had an overlap C of one-half the gate length, itwould take 500 μs, or ten times as long to reduce the threshold voltageof the memory cell by the same amount.

Such a reduced erase capability worsens the endurance properties of thememory cell 110. As described above, in general, electrons are injectedinto the charge trapping layer 20 farther from drain 50 in theprogramming cycle than the holes are injected in the erase cycle. Andtherefore, those electrons that are trapped in the charge trapping layer20 farthest away from the drain 50 cannot be completely erased byinjecting holes in the nitride layer. This is especially true in longercharge trapping layers. It is believed that this is the reason that theregions between the electron injection in the programming phase and thehole injection in the erasing phase are not identical (Regions A-B inFIG. 4).

In embodiments of this invention, restricting the overlap length Cprovides a marked improvement in the erase speed and endurance of aSONOS cell. Accordingly, embodiments of the invention seek to controlthe overlap length of charge trapping layer, rather than simplycontrolling the length of the charge trapping layer 20 itself. Also,because the charge trapping layer 20 is a nonconductive layer,contacting the source 70 and drain 50 from a metallic wiring layer (notshown) is not problematic.

An additional benefit of not creating the charge trapping layer 20across the entire memory cell 110 length is that, as is shown in FIGS. 5and 6, the gate insulating layer 90 can be used in place of the ONOstack (the tunneling layer 10, the charge trapping layer 20, and theblocking layer 30). Accordingly, the gate insulating layer 90 has alower effective oxide thickness (Tox) than the ONO stack, which furtherreduces the threshold voltage of the SONOS memory cell 110, compared tothe conventional SONOS cell 5 of FIGS. 1-4. This lowered threshold hasrelated advantages of 1) a higher programming speed and lower operationvoltage because of the sufficient current supply in the program phase;and 2) a faster read speed due to the increased current in a cell in itserased state.

FIGS. 8-11 describe a fabrication method for the nonvolatile memorydevice 110, according to an embodiment of the present invention.

The process begins as illustrated in FIG. 8, with the formation of anONO structure 33 on the surface of a substrate 60. The ONO layer 33includes a tunneling layer 10, for example a silicon dioxide layer,overlying the surface of substrate 60, a charge trapping layer 20overlying the tunneling layer 10, and a blocking layer 30, which canalso be, for example, a silicon dioxide layer. In one embodiment, thetunneling layer 10 is formed by a thermal oxidation of the substrate 60.The oxidation can be performed in a nitrogen containing environment suchthat the tunneling layer 10 is an oxynitride layer. Following theoxidation process, the charge trapping layer 20 can be deposited byChemical Vapor Deposition (CVD). After depositing the charge trappinglayer 20 on the tunneling layer 10, the blocking layer 30 is formed, forexample by using another CVD process. In a preferred embodiment, thetunneling layer 10 is thermally grown to a thickness of about 15-80 Å,the charge trapping layer 20 is preferably deposited to a thickness ofaround 40-80 Å, and the blocking layer 30 is preferably deposited to athickness of about 40-120 Å.

Next, a photoresist film 80 having a thickness of about 1 μm is appliedto the substrate surface and patterned to enable a portion of the ONOstructure 33 to be removed. Once the pattern is complete in thephotoresist 80, the ONO structure 33 is etched with, for example,hydrofluoric acid to expose a portion of the silicon substrate 60 (FIG.9).

Subsequently, the surface of the exposed silicon substrate 60 isoxidized, for example by a heat treatment of between about 850 to 900°C. for about 60 minutes, to form a gate insulating layer 90 of silicondioxide having a thickness of about 100-150 Å. A polycrystallinesilicon, or polysilicon, layer to be used for a control gate electrode40 is deposited to about 1500 Å thickness over the entire surface of theresulting structure by using, for example, a CVD technique (FIG. 10). Inone embodiment, phosphine gas is mixed at a rate of about 10% by volumewith a source gas for the CVD so that the resulting polysilicon layercan be doped with n-type impurity (Phosphorus), thereby giving the layerhigher conductivity than an undoped polysilicon layer. Also, a metalsilicidation process can be used on the gate electrode 40 to reduce acurrent resistance of a gate line.

Next, the polysilicon layer 40 is etched, for example, by a Reactive IonEtching (RIE) technique while masked with a photoresist film (not shown)to define the control gate electrode 40 (FIG. 11). The ONO structure 33may also etched at the edge of the control gate electrode 40.Alternately, because the ONO structure 33 is a nonconductive layer, itdoes not have to be etched to have the same edge as the control gateelectrode 40. Such a structure would be like that shown in FIG. 6,which, incidentally, also includes a metal silicide layer 100 on thecontrol gate electrode 40, as described above.

Generally, the ONO structure 33 and gate insulating layer 90 will havedifferent thicknesses. Having the gate insulating layer 90 be thinnerthan the ONO structure 33, as shown in FIG. 11, is efficient in that itlowers the operation voltage of memory device 110.

Next, doping ions, such as arsenic ions, are implanted with anacceleration energy of about 60 keV and a dose of about 5E15/cm² tosimultaneously form a n+ type source region 70 and an n+ type drainregion 50. The source 70 and drain 50 are formed at the edges of thecontrol gate 40, but within the substrate 60.

FIG. 12 is a sectional view of yet a different embodiment of theinvention. Shown in that figure is a memory cell 120 where the chargetrapping layer 20 extends from each side of the cell, i.e., near boththe source 70 and the drain 50. The memory cell 120 is able to store twodata bits in one cell, because electrons or holes can be trapped in eachseparate area of the charge trapping layer 20. Programming, reading anderasing the two-bit memory cell 120 of FIG. 12 is identical to the samefunctions as the single bit memory cell 110 described above, except thatthe programming, erasing and reading each bit is performed independentof the other. For instance, the electrons stored in the charge trappinglayer 20 near the drain 50, termed the “right bit,” can be read in thereverse direction by applying read voltages (from the chart in FIG. 7B)to the source 70 and the gate 40, and grounding the drain 50. Similarly,to read the left bit (the region of the nitride layer 20 near the source70) in the reverse direction, read voltages are applied to the gate 40and to the drain 50 while the source 70 is grounded.

FIGS. 13A-13G illustrate a fabrication method to create the generalstructure for the memory cell 120 of FIG. 12, according to embodimentsof the invention.

The process begins as illustrated in FIG. 13A, by creating the ONOstructure 33 on the surface of a substrate 60, as above described withreference to FIG. 8. The ONO layer 33 includes the tunneling layer 10,the charge trapping layer 20, and the blocking layer 30. Next, as shownin FIG. 13B, the photoresist film 80 is applied and patterned to enableetching of the blocking layer 30 and the charge trapping layer 20 in theareas not covered by the photoresist 80. After the etching, thephotoresist film 80 is stripped, as shown in FIG. 13D.

As shown in FIG. 13E, the blocking layer 30 that was exposed bystripping the photoresist film 80 is then etched, along with the portionof the tunneling layer 10 that is not covered by the charge trappinglayer. Thus, at the state in the formation process, the tunneling layer10 and charge trapping layer 20 exist, separated by an exposed portionof the substrate 60.

Next, as shown in FIG. 13F, an oxide layer is deposited on the substrate60, such as by, for example, a chemical vapor deposition. The oxidecovers all of the exposed surfaces, and creates a new blocking layer30B, as well as the gate layer 90. Finally, as shown in FIG. 13G, apolysilicon layer is deposited to form the gate 40. To fully form thememory cell 120 of FIG. 12, all that is required is to form the source70 and drain 50 regions, as well as the silicide layer 100.

An alternate method to produce the memory device 120 is shown in FIGS.14A-14C. FIG. 14A shows the substrate 60 in the same state it was in asshown in FIG. 13F, i.e., after the oxide deposition that formed theblocking layer 30B. Additionally, to increase the thickness of the gatelayer 90, the deposited oxide can be thermally grown to create the gatelayer 90 of the appropriate thickness. Finally, as shown in FIG. 14C,the structure is covered by a polysilicon layer to become the gate 40.

It should be mentioned that, the charge trapping layer can be formed ofdifferent types of materials without affecting the function of thememory cell. For instance, the charge trapping layer could have adielectric base with islands of a charge trapping material formedtherein. For example, a dielectric base of silicon dioxide could be usedhaving buried or implanted islands of polysilicon or silicon nitridematerial. Or, the charge trapping layer could be an oxynitride layer,for example. Further examples include the trapping layer being formed ofnitride dots or polysilicon dots. Any material sufficient to have thenecessary charge trapping function can be used in embodiments of theinvention.

Although example transistors having an N-type doping for source anddrain regions have been described, nothing limits embodiments of theinvention from using semiconductor materials from the opposite type.Additionally, some of the details of processes well known in the arthave been omitted for brevity. For instance, voltages other than thosedescribed herein can be used to program, read, or erase the non-volatilememory cells.

Implementation of a memory cell and memory array device isstraightforward to implement in light of the above disclosure. Asalways, implementation details are left to the system designer. Thecomponents used to create the cells in the array may be formed in anyway, with any materials as long as they can accomplish the functionsdescribed above. The actual amount of overlap of the trapping layer bythe control gate may be best determined empirically.

Thus, although particular embodiments for a non-volatile memory cellhave been discussed, it is not intended that such specific references beconsidered as limitations upon the scope of this invention, but ratherthe scope is determined by the following claims and their equivalents.

1. A method for forming a non-volatile memory cell, the methodcomprising: forming a tunneling layer over a substrate surface; forminga charge trapping layer disposed on the first insulating layer; forminga blocking layer over the charge trapping layer; etching the blockinglayer, the charge trapping layer, and the tunneling layer to expose afirst portion of the substrate and to form a substantially vertical edgestructure including edges of the blocking layer, the charge trappinglayer, and the tunneling layer; forming a gate insulation layer on thefirst portion of the substrate surface to a thickness less than athickness of the vertical edge structure; forming a gate layer disposedon the gate insulation layer and the blocking layer, the gate layerhaving a first edge and a second edge; and forming a source region and adrain region in the substrate substantially below the respective firstand second edges of the gate layer.
 2. The method of claim 1 wherein thefirst portion of the substrate is greater than one-half of a distancebetween the source region and the drain region.
 3. The method of claim 1wherein the first portion of the substrate is greater than two-thirds ofa distance between the source region and the drain region.
 4. The methodof claim 1 wherein the first portion of the substrate is approximatelythree-fourths of a distance between the source region and the drainregion.
 5. The method of claim 1 wherein forming a charge trapping layercomprises forming a silicon nitride layer.
 6. The method of claim 5wherein the silicon nitride layer has a thickness of between about 40-80Å.
 7. The method of claim 1 wherein forming a charge trapping layercomprises forming a layer of nitride dots.
 8. The method of claim 1wherein forming a charge trapping layer comprises forming a layer ofpolysilicon dots.
 9. The method of claim 1 wherein forming a chargetrapping layer comprises forming an oxynitride layer.
 10. The method ofclaim 1 wherein forming the tunneling layer comprises forming anoxynitride layer.
 11. The method of claim 1 wherein forming thetunneling layer comprises forming a silicon dioxide layer.
 12. Themethod of claim 1 wherein forming a gate layer comprises: forming alayer of polysilicon material over the gate insulation layer and theblocking layer; and etching the layer of polysilicon material.
 13. Amethod for forming a non-volatile memory cell, the method comprising:forming a tunneling layer over a portion of a substrate surface, thesubstrate including a source region and a drain region; forming a chargetrapping layer over either the source region or the drain region, thecharge trapping layer having a length limited so as to allow anyelectrons stored in the trapping layer during a programming process tobe erased during an erasing process; forming a blocking layer over thecharge trapping layer; forming a gate insulation layer on a portion ofthe substrate surface not covered by the tunneling layer; and forming agate layer disposed over the gate insulation layer and the blockinglayer.
 14. The method of claim 13 wherein a length of the chargetrapping layer covered by the gate layer is less than one-half adistance from an edge of the drain region to an edge of the sourceregion.
 15. The method of claim 13 wherein a length of the chargetrapping layer covered by the gate layer is less than one-fourth adistance from an edge of the drain region to an edge of the sourceregion.
 16. The method of claim 13 wherein forming a charge trappinglayer comprises forming a silicon nitride layer.
 17. The method of claim13 wherein forming a charge trapping layer comprises forming a layer ofnitride dots.
 18. The method of claim 13 wherein forming a chargetrapping layer comprises forming a layer of polysilicon dots.
 19. Themethod of claim 13 wherein forming a charge trapping layer comprisesforming an oxynitride layer.
 20. A method for forming a non-volatilememory cell, the method comprising: forming a tunneling layer over afirst portion, a second portion, and third portion of a substrate;forming a charge trapping layer disposed on the tunneling layer; forminga blocking layer on the charge trapping layer; etching the blockinglayer, the charge trapping layer, and the tunneling layer to expose thesecond portion of the substrate; forming a gate insulation layer on thesecond portion of the substrate; and forming a control gate disposed onthe gate insulation layer and the blocking layers on the first and thirdportion of the substrate.
 21. The method of claim 20 wherein the controlgate has a first edge and a second edge, the method further comprisingforming a source region and a drain region in the substratesubstantially below the first edge and the second edge, respectively, ofthe control gate.
 22. The method of claim 20 wherein exposing the secondportion of the substrate separates the charge trapping layer into afirst charge trapping layer and a second charge trapping layer, andwherein the control gate covers a length of at least one of the first orsecond charge trapping layers that is less than one-half a length of thecontrol gate.
 23. The method of claim 20 wherein exposing the secondportion of the substrate separates the charge trapping layer into afirst charge trapping layer and a second charge trapping layer, andwherein the control gate covers a length of at least one of the first orsecond charge trapping layers that is less than one-third a length ofthe control gate.
 24. The method of claim 20 wherein exposing the secondportion of the substrate separates the charge trapping layer into afirst charge trapping layer and a second charge trapping layer, andwherein the control gate covers a length of at least one of the first orsecond charge trapping layers that is less than one-fourth a length ofthe control gate.
 25. A method for forming a non-volatile memory cell,the method comprising: forming a tunneling layer over a first portion, asecond portion, and a third portion of a substrate; forming a chargetrapping layer disposed on the tunneling layer; forming a masking layeron the charge trapping layer; patterning the masking layer; using thepatterned masking layer as a mask, etching the charge trapping layer andthe tunneling layer to expose the second portion of the substrate:forming a blocking layer disposed on the charge trapping layer over thefirst and third portions of the substrate; forming an insulating layeron the second portion of the substrate; forming a control gate disposedon the insulating layer on the second portion of the substrate and onthe blocking layer.
 26. The method of claim 25 wherein forming aninsulating layer on the second portion of the substrate comprisesdepositing the insulating layer.
 27. The method of claim 26, furthercomprising thermally growing a gate insulating layer on the depositedinsulating layer.
 28. The method of claim 25 wherein forming a blockinglayer and forming an insulating layer occur simultaneously.